050-7087 rev b 2-2004 maximum ratings all ratings: t c = 25c unless otherwise specified. caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com t-max ? g d s to-264 b2fll lfll apt12067b2fll apt12067lfll 1200v 18a 0.670 ? ? power mos 7 ? is a new generation of low loss, high voltage, n-channel enhancement mode power mosfets. both conduction and switchinglosses are addressed with power mos 7 ? by significantly lowering r ds(on) and q g . power mos 7 ? combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with apt'spatented metal gate structure. lower input capacitance increased power dissipation lower miller capacitance easier to drive lower gate charge, qg popular t-max? or to-264 package fast recovery body diode power mos 7 r fredfet characteristic / test conditionsdrain-source breakdown voltage (v gs = 0v, i d = 250a) drain-source on-state resistance 2 (v gs = 10v, i d = 9a) zero gate voltage drain current (v ds = 1200v, v gs = 0v) zero gate voltage drain current (v ds = 960v, v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 2.5ma) symbol v dss i d i dm v gs v gsm p d t j ,t stg t l i ar e ar e as parameterdrain-source voltage continuous drain current @ t c = 25c pulsed drain current 1 gate-source voltage continuousgate-source voltage transient total power dissipation @ t c = 25c linear derating factoroperating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. avalanche current 1 (repetitive and non-repetitive) repetitive avalanche energy 1 single pulse avalanche energy 4 unit volts amps volts watts w/c c amps mj static electrical characteristics symbol bv dss r ds(on) i dss i gss v gs(th) unit volts ohms ana volts min typ max 1200 0.670 250 1000 100 35 apt12067b2fll_lfll 1200 1872 3040 565 4.55 -55 to 150 300 1850 2500 downloaded from: http:///
050-7087 rev b 2-2004 dynamic characteristics apt12067b2fll - lfll source-drain diode ratings and characteristics thermal characteristics characteristic / test conditionscontinuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 (v gs = 0v, i s = -i d 18a) peak diode recovery dv / dt 5 reverse recovery time(i s = -i d 18a, di / dt = 100a/s) reverse recovery charge(i s = -i d 18a, di / dt = 100a/s) peak recovery current(i s = -i d 18a, di / dt = 100a/s) symbol i s i sm v sd dv / dt t rr q rr i rrm unit amps volts v/ns ns c amps min typ max 1872 1.3 18 t j = 25c 300 t j = 125c 600 t j = 25c 2.0 t j = 125c 6.0 t j = 25c 13 t j = 125c 21 symbol r jc r ja min typ max 0.22 40 unitc/w characteristicjunction to case junction to ambient 1 repetitive rating: pulse width limited by maximum junction temperature 2 pulse test: pulse width < 380 s, duty cycle < 2% 3 see mil-std-750 method 3471 4 starting t j = +25c, l = 15.43mh, r g = 25 , peak i l = 18a 5 dv / dt numbers reflect the limitations of the test circuit rather than the device itself. i s - i d 18a di / dt 700a/s v r 1200 t j 150 c 6 eon includes diode reverse recovery. see figures 18, 20. apt reserves the right to change, without notice, the specifications and information contained herein. symbol c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f e on e off e on e off characteristicinput capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain ("miller") charge turn-on delay time rise time turn-off delay time fall time turn-on switching energy 6 turn-off switching energyturn-on switching energy 6 turn-off switching energy test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 600v i d = 18a @ 25c resistive switching v gs = 15v v dd = 600v i d = 18a @ 25c r g = 0.6 inductive switching @ 25c v dd = 800v, v gs = 15v i d = 18a, r g = 5 inductive switching @ 125c v dd = 800v, v gs = 15v i d = 18a, r g = 5 min typ max 4420 660115 150 2095 22 19 22 19 705302 1239 402 unit pf nc ns j z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.25 0.2 0.15 0.1 0.05 0 note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm 0.5 single pulse 0.1 0.3 0.7 0.9 0.05 downloaded from: http:///
v ds , drain-to-source voltage (volts) figure 2, transient thermal impedance model figure 3, low voltage output characteristics v gs , gate-to-source voltage (volts) i d , drain current (amperes) figure 4, transfer characteristics figure 5, r ds(on) vs drain current t c , case temperature (c) t j , junction temperature (c) figure 6, maximum drain current vs case temperature figure 7, breakdown voltage vs temperature t j , junction temperature (c) t c , case temperature (c) figure 8, r ds(on) vs. temperature figure 9, threshold voltage vs temperature r ds(on) , drain-to-source on resistance i d , drain current (amperes) i d , drain current (amperes) (normalized) v gs(th) , threshold voltage bv dss , drain-to-source breakdown r ds(on) , drain-to-source on resistance i d , drain current (amperes) (normalized) voltage (normalized) 050-7087 rev b 2-2004 apt12067b2fll - lfll typical performance curves 0 5 10 15 20 25 30 0 1 2 3 4 5 6 7 0 5 10152025303540 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 5045 40 35 30 25 20 15 10 05 0 1816 14 12 10 86 4 2 0 2.52.0 1.5 1.0 0.5 0.0 4035 30 25 20 15 10 50 1.401.30 1.20 1.10 1.00 0.90 0.80 1.15 1.10 1.05 1.00 0.95 0.90 0.85 1.21.1 1.0 0.9 0.8 0.7 0.6 4.5v 6v 5.5v 6.5v 5v v gs =15,10 & 8v 7v t j = +125c t j = +25c t j = -55c v ds > i d (on) x r ds(on) max. 250sec. pulse test @ <0.5 % duty cycle v gs =10v v gs =20v normalized to v gs = 10v @ i d = 9a i d = 9a v gs = 10v 0.08930.0842 0.0485 0.0102f0.106f 0.979f power (watts) junctiontemp. ( c) rc model case temperature. ( c) downloaded from: http:///
v gs , gate-to-source voltage (volts) i d , drain current (amperes) i dr , reverse drain current (amperes) c, capacitance (pf) v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 10, maximum safe operating area figure 11,capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (volts) figure 12, gate charge vs gate-to-source voltage f igure 13, source-drain diode forward voltage 050-7087 rev b 2-2004 apt12067b2fll - lfll 20,00010,000 5,0001,000 500100 10 200100 10 1 1 10 100 1200 0 10 20 30 40 50 0 20 40 60 80 100 120 140 160 180 200 0.3 0.5 0.7 0.9 1.1 1.3 1.5 7210 51 1612 84 0 c rss c iss c oss v ds =600v v ds =240v v ds =960v i d = 18a t j =+150c t j =+25c t c =+25c t j =+150c single pulse operation here limited by r ds (on) 1ms 100s 10ms i d (a) i d (a) figure 14, delay times vs current figure 15, rise and fall times vs current i d (a) r g , gate resistance (ohms) figure 16, switching energy vs current figure 17, switching energy vs. gate resistance 6050 40 30 20 10 0 30002500 2000 1500 1000 500 0 v dd = 800v r g = 5 t j = 125c l = 100h v dd = 800v r g = 5 t j = 125c l = 100h t d(on) t d(off) e on e off e on e off t r t f e on and e off ( j) t d(on) and t d(off) (ns) switching energy ( j) t r and t f (ns) v dd = 800v r g = 5 t j = 125c l = 100h e on includes diode reverse recovery v dd = 800v i d = 18a t j = 125c l = 100h e on includes diode reverse recovery 160140 120 100 8060 40 20 0 20001500 1000 500 0 0 1 0 2 0 3 0 0 5 1 01 52 02 53 0 0 5 10 15 20 25 30 0 5 10 15 20 25 30 35 40 45 50 downloaded from: http:///
apt12067 b2fll- lfll 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 4.50 (.177) max. 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 5.45 (.215) bsc 2.87 (.113) 3.12 (.123) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) 0.79 (.031) drain source gate these dimensions are equal to the to-247 without the mounting hole. drain 2-plcs. 19.51 (.768) 20.50 (.807) 19.81 (.780) 21.39 (.842) 25.48 (1.003) 26.49 (1.043) 2.29 (.090) 2.69 (.106) 0.76 (.030) 1.30 (.051) 3.10 (.122) 3.48 (.137) 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 2.59 (.102) 3.00 (.118) 0.48 (.019) 0.84 (.033) drain source gate dimensions in millimeters and (inches) drain 2.29 (.090) 2.69 (.106) 5.79 (.228) 6.20 (.244) 2.79 (.110) 3.18 (.125) 5.45 (.215) bsc 2-plcs. dimensions in millimeters and (inches) t-max tm (b2) package outline to-264 (l) package outline i c d.u.t. apt60d120b v ce figure 20, inductive switching test circuit v cc g 050-7087 rev b 2-2004 apts products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreign patents pending. all rights reserved. figure 18, turn-on switching waveforms and definitions figure 19, turn-off switching waveforms and definitions 90% 90% t d(off) t f 10% 0 drain current drain voltage gate voltage t j 125c 10% 90% switching energy t d(on) t r 10% 5% drain current drain voltage gate voltage t j 125c 5% switching energy downloaded from: http:///
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